Details
Title
Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide CapacitorsJournal title
Metrology and Measurement SystemsYearbook
2017Volume
vol. 24Numer
No 2Authors
Keywords
niobium oxide capacitors ; tantalum capacitors ; leakage current ; ion diffusion ; ion driftDivisions of PAS
Nauki TechniczneCoverage
255–264Publisher
Polish Academy of Sciences Committee on Metrology and Scientific InstrumentationDate
2017.06.30Type
Artykuły / ArticlesIdentifier
ISSN 0860-8229References
Elhadidy (2015), Ion electromigration in CdTe Schottky metal - semiconductor - metal structure, Solid State Ionics, 278. ; Laleko (1982), Ionic current and kinetics of activation of the conductivity of anodic oxide films on tantalum in strong electric fields, Soviet Electrochemistry, 18, 743. ; Teverovsky (2010), Degradation of leakage currents in solid tantalum capacitors under steady - state bias conditions Electronic Components and Technology th, Conference Proc, 752. ; Smulko (2011), Acoustic emission for detecting deterioration of capacitors under aging, Microelectronics Reliability, 51, 621. ; Szewczyk (2016), Voltage Dependence of Supercapacitor Capacitance, Metrol Meas Syst, 23, 403. ; Pavelka (2002), Noise and transport characterisation of tantalum capacitors, Microelectronics Reliability, 42, 841. ; Smulko (2012), Quality testing methods of foil - based capacitors, Microelectronics Reliability, 52, 603. ; Chaneliere (1998), Tantalum pentoxide thin films for advanced dielectric applications Material and, Science Eng, 269. ; Sedlakova (2016), Supercapacitor Degradation Assesment by Power Cycling and Calendar Life Tests, Metrol Meas Syst, 23, 345.DOI
10.1515/mms-2017-0034