This work presents a theoretical study for the distribution of nanocomposite structure of plasmonic thin-film solar cells through the absorber layers. It can be reduced the material consumption and the cost of solar cell. Adding nanometallic fillers in the absorber layer has been improved optical, electrical characteristics and efficiency of traditional thin film solar cells (ITO /CdS/PbS/Al and SnO2/CdS/CdTe/Cu) models that using sub micro absorber layer. Also, this paper explains analysis of J-V, P-V and external quantum efficiency characteristics for nanocomposites thin film solar cell performance. Also, this paper presents the effect of increasing the concentration of nanofillers on the absorption, energy band gap and electron-hole generation rate of absorber layers and the effect of volume fraction on the energy conversion efficiency, fill factor, space charge region of the nanocomposites solar cells.
Thin film solar cells based on multinary compound Cu(In,Ga)Se2 show record photovoltaic conversion efficiency approaching 20%. Investigation on defect physics in this compound is crucial for making further progress in the technology. In this work we present the results on photocapacitance (PC) and deep level optical spectroscopy (DLOS) for two types of cells high efficiency Cu(In,Ga)Se2 cell with about 20% of gallium and pure gallium CuGaSe2 device. We show that PC and DLOS, employed as the techniques complimentary to deep level transient spectroscopy DLTS and admittance spectroscopy, are useful methods in providing information on defect levels in solar cells. In particular they are helpful in diffierentiating between levels belonging to the bulk of absorber and to the interface states. We tentatively assign some of the observed deep levels to InCu or GaCu antisites and Cu interstitials.
GZO/IZO semiconductor thin films were prepared on the ITO substrate via sol-gel spin coating method for using in the dyesensitized solar cells (DSSCs). For this purpose, GZO and IZO thin films were optimized by the percentage of doping gallium and indium in zinc oxide and were studied their electrical, optical and structural properties. After that, the layers with the best performance were selected for use in the DSSCs. The concentration of all solutions for spin coating processes was 0.1 M and zinc oxide has been doped with gallium and indium, with different doping percentages (0, 0.5, 1, 2 and 4 volume percentage). So, by studying the properties of the fabricated thin films, it was found the films with 0.5%GZO and 0.5%IZO have the best performance and hence, the optimized dual-layer (0.5% GZO/0.5% IZO (GIZO)) were prepared and studied their electrical and optical properties. The synthesized optimized dual-layer film was successfully used as the working electrode for dye-sensitized solar cells. The sample with 0.5%IZO shows the 9.1 mA/cm2 short-circuit current density, 0.52 V open circuit voltage, 63% fill factor and 2.98% efficiency.
The presented article is a report on progress in photovoltaic devices and material processing. A cadmium telluride solar cell as one of the most attractive option for thin-film polycrystalline cell constructions is presented. All typical manufacturing steps of this device, including recrystalisation and junction activation are explained. A new potential field of application for this kind of device - the BIPV (Building Integrated Photovoltaic) is named and discussed. All possible configuration options for this application, according to material properties and exploitation demands are considered. The experimental part of the presented paper is focused on practical implementation of the high- temperature polymer foil as the substrate of the newly designed device by the help of ICSVT (Isothermal Close Space Vapour Transport) technique. The evaluation of the polyester and polyamide foils according to the ICSVT/CSS manufacturing process parameters is described and discussed. A final conclusion on practical verification of these materials is also given.
The ethylene vinyl acetate (EVA) is widely used for solar modules encapsulation. During lamination process EVA melts and chemical bonds between polymer chains are created. Its number is tightly related to cross-linking degree and it is consider as a major quality reference for module encapsulation. The lamination can be described as a process with two stages: melting and curing where the typical temperature for curing is in the range from 145 to 175°C. In the present study, for the first time, comparison of three commercial available EVA foils with low curing temperature EVA (EVA LOW). For this reason, the temperature of following lamination processes was set from a range from 115 to 175°C. The behavior of cured EVA films under investigation EVA was determined with two approaches: with extraction and with optical methods. The results indicate the applicability of these methods for the EVA cross-linking characterization. Finally, the extraordinary behavior of EVA LOW foil was noticed.
In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.
Noise spectroscopy as a highly sensitive method for non-destructive diagnostics of semiconductor devices was applied to solar cells based on crystalline silicon with a view to evaluating the quality and reliability of this solar cell type. The experimental approach was used in a reverse-biased condition where the internal structure of solar cells, as well as pn-junction itself, was electrically stressed and overloaded by a strong electric field. This gave rise to a strong generation of a current noise accompanied by local thermal instabilities, especially in the defect sites. It turned out that local temperature changes could be correlated with generation of flicker noise in a wide frequency range. Furthermore, an electrical breakdown in a nonstable form also occurred in some specific local regions what created micro-plasma noise with a two-level current fluctuation in the form of a Lorentzian-like noise spectrum. The noise research was carried out on both of these phenomena in combination with the spectrally-filtered electroluminescence mapping in the visible/near-infrared spectrum range and the dark lock-in infrared thermography in the far-infrared range. Then the physical origin of the light emission from particular defects was searched by a scanning electron microscope and additionally there was performed an experimental elimination of one specific defect by the focused ion beam milling.
The aim of this article is to present the results of research aimed at confirmation whether it is possible to form an intermediate band in GaAs implantation with H+ ions. The obtained results were discussed with particular emphasis on possible applications in the photovoltaic industry. As it is commonly known, the idea of intermediate band solar cells reveals considerable potential as the most fundamental principle of the next generation of semiconductors solar cells. In progress of the research, a series of GaAs samples were subjected to poly-energy implantation of H+ ions, followed by high-temperature annealing. Tests were conducted using thermal admittance spectroscopy, under conditions of variable ambient temperature, measuring signal frequency in order to localize deep energy levels, introduced by ion implantation. Activation energy ΔE was determined for additional energy levels resulting from the implantation of H+ ions. The method of determining the activation energy value is shown in Fig. 2 and the values read from it are #27;0 = 10��9 (Ω#1;cm)��1 for 1000=T0 = 3:75 K��1 and #27;1 = 1:34 #2; 10��4 (Ω#1;cm)��1 for 1000=T1 = 2:0 K��1. As a result, we obtain ΔE #25; 0:58 eV. It was possible to identify a single deep level in the sample of GaAs implanted with H+ ions. Subsequently, its location in the band gap was determined by estimating the value of ΔE. However, in order to confirm whether the intermediate band was actually formed, it is necessary to perform further analyses. In particular, it is necessary to implement a new analytical model, which takes into consideration the phenomena associated with the thermally activated mechanisms of carrier transport as it was described in . Moreover, the influence of certain parameters of ion implantation, post-implantation treatment and testing conditions should also be considered.
This paper presents maps of spatial distributions of the short circuit current Isc(x,y) and the open circuit voltage Uoc(x,y) of the investigated low cost solar cells. Visible differences in values of these parameters were explained by differences in the serial and shunt resistances determined for different points of solar cells from measurements of I–V characteristics. The spectral dependence of the photo voltage of solar cell is also shown, discussed and interpreted in the model of amorphous and crystal silicon.