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Abstract

In this work studies of barrier height local values are presented. Distribution of the gate-oxide EBG(x, y) and semiconductor-oxide EBS(x, y) barrier height local values have been determined using the photoelectric measurement methods. Two methods were used to obtain the local values of the barrier heights: modified Powell-Berglund method and modified Fowler method. Both methods were modified in such a way as to allow determination of the EBG(x, y) and EBS(x, y) distribution over the gate area using a focused UV light beam of a small diameter d = 0.3 mm. Measurements have been made on a series of Al-SiO2-Si(n+) MOS structures with semitransparent (tAl = 35 nm) square aluminum gate (1 x 1 mm2). It has been found that the EBG(x, y) distribution has a characteristic dome-like shape, with highest values at the center of the gate, lower at the gate edges and still lower at gate corners. On the contrary, the EBS(x, y) distribution is of a random character. Also, in this paper, both barrier height measurements have been compared with the photoelectric effective contact potential difference fMS(x, y) measurements. These results show good agreement between distribution of the barrier heights EBG(x, y) and EBS(x, y) measurements and independently determined shape of the effective contact potential difference fMS(x, y) distribution.
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